caution : observe precautions when handling because these devices are sensitive to electrostatic discharge document no. pu10 752 ej0 1 v0ds ( 1st editio n) date published april 200 9 ns silicon power mos fet ne55 310 79a 7.5 v operation silicon rf power ldmos fet for uhf - band 10 w transmission amplifiers description the ne 5531079a is an n - channel silicon power laterally diffused mos fet specially designed as the transmission power amplifier for 7.5 v r adio s ystems . die are manufactured using our newmos - m1 technology and housed in a surface mount package. th is device can deliver 40 .0 dbm output power with 68 % power added efficiency at 460 m hz with 7.5 v supply voltage. features ? high output power : p out = 40.0 dbm typ. (v ds = 7.5 v, i dset = 2 00 ma, f = 460 mhz, p in = 25 dbm) ? high power added efficienc y : ? add = 6 8 % typ. (v ds = 7.5 v, i dset = 2 00 ma, f = 460 mhz, p in = 25 dbm) ? high linear gain : g l = 20.5 db typ. (v ds = 7.5 v, i dset = 200 ma, f = 460 mhz, p in = 10 dbm) ? surface mount package : 5.7 ? 5.7 ? 1.1 mm max. ? single supply : v ds = 7.5 v max . applications ? 460 mhz band radio system s ? 900 mhz band radio system s ordering information part number order number package marking supplying form ne5531079a ne5531079a - a 79a (pb - free) w5 ? 12 mm wide embossed taping ? gate pin face the perforation side of the tape ne5531079a - t1 ne5531079a - t1 - a ? 12 mm wide embossed taping ? gate pin face the perforation side of the tape ? qty 1 kpcs/reel ne5531079a - t1a ne5531079a - t1a - a ? 12 mm wide embossed taping ? gate pin face the perforation side of the t ape ? qty 5 kpcs/reel remark to order evaluation samples, please contact your nearby sales office. part number for sample order: ne 5531079a - a
data sheet pu10 752 ej0 1 v0ds 2 ne55 310 79a absolute maximum ratings (t a = +25 ? operation in excess of any one of these parameters may result in perm anent damage. parameter symbol ratings unit drain to source voltage v ds note 1 30 v gate to source voltage v gs 6 .0 v drain current i d s 3 .0 a drain current (pulse test) i d s note 2 6 .0 a total power dissipation p tot 35 w channel temperature t ch 125 ? c storage temperature t stg ? 5 5 to +125 ? c note 1. v ds will be used under 12 v on rf operation. 2. duty cycle ? 50%, t on ? 1 s recommended operating conditions parameter symbol test conditions min. typ. max. unit drain to source voltage v ds ? 6.0 7 .5 v gate to source voltage v gs 1.15 1.55 2.05 v drain current i d s ? 2.0 ? a input power p in f = 460 m hz, v ds = 6.0 v ? 25 30 dbm electrical characteristics (t a = +25 ? parameter symb ol test conditions min. typ. max. unit gate to source leakage current i gss v gs = 6.0 v ? ? 100 na drain to source leakage current (zero gate voltage drain current) i dss v ds = 25 v ? ? 10 na gate threshold voltage v th v ds = 7.5 v, i ds = 1.0 ma 0.8 1.15 1 .55 v thermal resistance r th channel to case ? 2.9 ? ? c/w transconductance g m v ds = 7.5 v, i ds = 700 ? 100 ma 2.5 3.2 4.0 s drain to source breakdown voltage bv dss i dss = 10 ? a 25 35 ? v output power p out f = 460 mhz, v ds = 7.5 v, 39.0 40.0 ? dbm drain current i d s p in = 25 dbm, ? 2.0 ? a power added efficiency ? add i dset = 200 ma (rf off) ? 68 ? % linear gain g l note ? 20.5 ? db note p in = 10 dbm dc performance is 100% testing. rf performance is testing several samples per wafer. wafer rejection criteria for standard devices is 1 reject for several samples.
data sheet pu10 752 ej0 1 v0ds 3 ne55 310 79a test circuit (f = 460 mhz ) the application circuits and their parameters are for reference only and are not intended for use in actual design - ins. components of test circuit for measuring electrical characteristics symbol value type maker c1 1 ? f grm31cr72a105ka01b murata c2 1 000 pf grm1882c1h 102ja01 murata c10 10 pf grm1882c1h100ja01 murata c11 24 pf atc100a240jw american technical ceramics c20 27 pf atc100a270jw american technical ceramics c21 1.8 pf atc100a1r8bw american technical ceramics c22 100 pf atc100a101jw american tech nical ceramics r1 4.7 k ? 1/8w chip resistor ? r2 150 ? 1/8w chip resistor ? l1 123 n h ? 0.5 mm , ? d = 3 mm, 10 turns ohesangyo u pcb ? r4775, t = 0.4 mm , ? r = 4.5, size = 30 ? 48 mm ?
data sheet pu10 752 ej0 1 v0ds 4 ne55 310 79a illustration of the test circuit assembled on evaluation board u sing the evaluation board symbol value c1 1 ? f c2 1 000 pf c10 10 pf c11 24 pf c20 27 pf c21 1.8 pf c22 100 pf r1 4.7 k ? r2 150 ? l1 123 n h
data sheet pu10 752 ej0 1 v0ds 5 ne55 310 79a typical characteristics (t a = +25 ? set = 2 00 ma, u nless otherwise specified ) remark the graphs indicate nominal characteristics.
data sheet pu10 752 ej0 1 v0ds 6 ne55 310 79a s - parameters
data sheet pu10 752 ej0 1 v0ds 7 ne55 310 79a package dimensions 79a (unit: mm) 79a package recommended p.c.b. layout (unit: mm)
8 data sheet pu10 752 ej0 1 v0ds ne55 310 79a recommended soldering conditions this product should be soldered and mounted under the foll owing recommended conditions. for soldering methods and conditions other than those recommended below, contact your nearby sales office. soldering method soldering conditions condition symbol infrared reflow peak temperature (package surface temperature ) : 260 ? c or below time at peak temperature : 10 seconds or less time at temperature of 220 ? c or higher : 60 seconds or less preheating time at 120 to 180 ? c : 120 ? 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flu x (% mass) : 0.2%(wt.) or below ir260 wave soldering peak temperature (molten solder temperature) : 260 ? c or below time at peak temperature : 10 seconds or less preheating temperature (package surface temperature) : 120 ? c or below maximum number of flow processes : 1 time maximum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below ws260 partial heating peak temperature (pin temperature) : 350 ? c or below soldering time (per pin of device) : 3 seconds or less maxi mum chlorine content of rosin flux (% mass) : 0.2%(wt.) or below hs350 - p3 caution do not use different soldering methods together (except for partial heating).
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